Effects of vacuum ultraviolet irradiation on trapped charges and leakage currents of low-k organosilicate dielectrics

نویسندگان

  • H. Zheng
  • X. Guo
  • D. Pei
  • E. T. Ryan
  • Y. Nishi
  • J. L. Shohet
چکیده

Articles you may be interested in Effect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics Appl. Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation Appl. The effects of plasma exposure and vacuum ultraviolet irradiation on photopatternable low-k dielectric materials Effect of vacuum ultraviolet and ultraviolet irradiation on mobile charges in the bandgap of low-k-porous organosilicate dielectrics High quality atomic-layer-deposited ultrathin Si-nitride gate dielectrics with low density of interface and bulk traps Appl.

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a r t i c l e i n f o Keywords: Vacuum ultraviolet irradiation Low-k dielectrics Charge accumulation Dielectric–substrate interface We compare the effect of various dielectric–substrate interfaces on charge accumulation during vacuum ultraviolet irradiation of capped low-k porous organosilicates to find that more charges are trapped in a dielectric stack deposited on silicon compared with the s...

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تاریخ انتشار 2015